收藏本站
NTK3043N
Power MOSFET
20 V, 285 mA, N ? Channel with ESD
Protection, SOT ? 723
Features
?
Enables High Density PCB Manufacturing
http://onsemi.com
?
?
?
?
?
?
44% Smaller Footprint than SC ? 89 and 38% Thinner than SC ? 89
Low Voltage Drive Makes this Device Ideal for Portable Equipment
Low Threshold Levels, V GS(TH) < 1.3 V
Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin
Environments such as Portable Electronics
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels Using the Same Basic Topology
These are Pb ? Free and Halogen Free Devices
V (BR)DSS
20 V
R DS(on) TYP
1.5 W @ 4.5 V
2.4 W @ 2.5 V
5.1 W @ 1.8 V
6.8 W @ 1.65 V
Top View
I D Max
285 mA
Applications
? Interfacing, Switching
? High Speed Switching
? Cellular Phones, PDAs
MAXIMUM RATINGS (T J = 25 ? C unless otherwise stated)
3
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
20
? 10
V
V
1
1 ? Gate
2
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t v 5s
Steady
State
T A = 25 ? C
T A = 85 ? C
T A = 25 ? C
T A = 25 ? C
I D
P D
255
185
285
440
mA
mW
2 ? Source
3 ? Drain
MARKING
DIAGRAM
t v 5s
545
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
T A = 25 ? C
T A = 85 ? C
T A = 25 ? C
I D
P D
210
155
310
mA
mW
SOT ? 723
CASE 631AA
STYLE 5
1
KA
Pulsed Drain Current
t p = 10 m s
I DM
400
mA
KA
M
= Device Code
= Date Code
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
T J , T STG
I S
T L
? 55 to
150
286
260
? C
mA
? C
ORDERING INFORMATION
Device Package Shipping ?
NTK3043NT1G SOT ? 723* 4000 / Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
NTK3043NT5G SOT ? 723* 8000 / Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*These packages are inherently Pb ? Free.
? Semiconductor Components Industries, LLC, 2013
January, 2013 ? Rev. 4
1
Publication Order Number:
NTK3043N/D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTK3134NT5G MOSFET N-CH 20V 750MA SOT-723
NTK3139PT5G MOSFET P-CH 20V 660MA SOT-723
NTK3142PT1G MOSFET P-CHAN 260MA 20V SOT-723
NTLGD3502NT2G MOSFET N-CH DUAL 20V 6-DFN
NTLGF3402PT2G MOSFET P-CH 20V 2.3A 6-DFN
NTLJD2104PTBG MOSFET P-CH DUAL 12V 4.3A 6WDFN
NTLJD2105LTBG MOSFET LOAD SW 8V 4.3A 6-WDFN
NTLJD3115PTAG MOSFET P-CH DUAL 20V 4.1A 6-WDFN
相关代理商/技术参数
NTK3134N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723
NTK3134NT1G 功能描述:MOSFET 20V/6V N CH T1 890mA 0.3 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTK3134NT1H 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTK3134NT5G 功能描述:MOSFET 20V/6V N CH T1 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTK3134NT5H 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTK3139P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT−723
NTK3139PT1G 功能描述:MOSFET 20V/6V P CH T1 780mA 0.4 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTK3139PT1H 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: